Total Ionizing Dose Effects of SiGe HBTs Induced by 60Co Gamma-Ray Irradiation-Reference-Cited by-同舟云学术

Total Ionizing Dose Effects of SiGe HBTs Induced by 60Co Gamma-Ray Irradiation

Published:2018-05-24 Issue:1 Volume:191 Page:98-103
ISSN:0029-5639
Container-title:Nuclear Science and Engineering
language:en
Short-container-title:Nuclear Science and Engineering

Author:

Liu Shu-Huan¹,Hussain Aqil¹,Li Da²,Guo Xiaoqiang²,Li Zhuo-Qi¹,Lawal Olarewaju Mubashiru¹,Yang Jiangkun¹,Chen Wei¹²

Affiliation:

1. Xi’an Jiaotong University, School of Nuclear Science and Technology, Shaanxi Engineering Research Center of Advanced Nuclear Energy, Shaanxi Key Laboratory of Advanced Nuclear Energy and Technology, Xi’an, Shaanxi, 710049, China

2. Northwest Institute of Nuclear Technology, Xi’an, Shaanxi, 710613, China

Funder

Natural Science Foundation of Shaanxi Province

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Nuclear Energy and Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00295639.2018.1450004

Reference12 articles.

1. On the Potential of SiGe HBTs for Extreme Environment Electronics

2. Proton and gamma radiation effects in a new first-generation SiGe HBT technology

3. Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure

4. Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector

5. Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs

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