Author:
Ullán M.,Rice J.,Brooijmans G.,Cressler J.D.,Damiani D.,Díez S.,Gadfort T.,Grillo A.A.,Hackenburg R.,Hare G.,Jones A.,Kierstead J.,Kononenko W.,Mandić I.,Martinez-McKinney F.,Metcalfe J.,Newcomer F.M.,Parsons J.A.,Phillips S.,Rescia S.,Sadrozinski H.F.-W.,Seiden A.,Spencer E.,Spieler H.,Sutton A.K.,Tazawa Y.,Wilder M.,Wulf E.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. On the Potential of SiGe HBTs for Extreme Environment Electronics
2. Physics potential and experimental challenges of the LHC luminosity upgrade
3. O. Bruning, LHC luminosity and energy upgrade: a feasibility study (in CERN-LHC-PROJECT-REPORT-626) December 2002, p. 98.
4. Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure
5. J. Metcalfe, Silicon germanium heterojunction bipolar transistors: exploration of radiation tolerance for use at SLHC, Masters Thesis, UCSC, September 2006.
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