Author:
Milanesio M.,Paolozzi L.,Moretti T.,Cardella R.,Kugathasan T.,Martinelli F.,Picardi A.,Semendyaev I.,Zambito S.,Nakamura K.,Takubo Y.,Togawa M.,Elviretti M.,Rücker H.,Cadoux F.,Cardarelli R.,Débieux S.,Favre Y.,Fenoglio C.A.,Ferrere D.,Gonzalez-Sevilla S.,Iodice L.,Kotitsa R.,Magliocca C.,Nessi M.,Pizarro-Medina A.,Sabater Iglesias J.,Saidi J.,Vicente Barreto Pinto M.,Iacobucci G.
Abstract
Abstract
A monolithic silicon pixel prototype produced for the
MONOLITH ERC Advanced project was irradiated with 70 MeV protons up
to a fluence of 1 × 1016
1 MeV n
eq/cm2. The ASIC contains a matrix of
hexagonal pixels with 100 μm pitch, readout by low-noise and
very fast SiGe HBT frontend electronics. Wafers with 50 μm
thick epilayer with a resistivity of 350 Ωcm were used to
produce a fully depleted sensor. Laboratory tests conducted with a
90Sr source show that the detector works satisfactorily after
irradiation. The signal-to-noise ratio is not seen to change up to
fluence of 6 × 1014
n
eq/cm2. The signal
time jitter was estimated as the ratio between the voltage noise and
the signal slope at threshold. At -35°C, sensor bias voltage
of 200 V and frontend power consumption of 0.9 W/cm2, the time
jitter of the most-probable signal amplitude was estimated to be σ
t
90Sr = 21 ps for proton fluence up to
6 × 1014
n
eq/cm2 and 57 ps at
1 × 1016
n
eq/cm2. Increasing the sensor
bias to 250 V and the analog voltage of the preamplifier from 1.8
to 2.0 V provides a time jitter of 40 ps at
1 × 1016
n
eq/cm2.
Subject
Mathematical Physics,Instrumentation