On the Potential of SiGe HBTs for Extreme Environment Electronics-Reference-Cited by-同舟云学术

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On the Potential of SiGe HBTs for Extreme Environment Electronics

Published:2005-09 Issue:9 Volume:93 Page:1559-1582
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Cressler J.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/32147/01495906.pdf?arnumber=1495906

Cited by 166 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment;Journal of Instrumentation;2024-08-01

2. Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT;Physica Scripta;2024-04-23

3. Study on Interface Trap and Fixed Charge Generation under Channel Hot Carrier Stressing at Low Temperature Using Device Simulation;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16

4. The SiGe HBT at Cryogenic Temperatures: Invited Pager;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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