Gamma-Induced Degradation Effect of InP HBTs Studied by Keysight Model
Author:
Affiliation:
1. Henan University of Science and Technology, Electrical Engineering College, Luoyang 471023, China
Publisher
Informa UK Limited
Subject
Nuclear Energy and Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00295639.2020.1798679
Reference29 articles.
1. A Watt-level Broadband Power Amplifier in GaAs HBT Process
2. Design of a Low-Phase-Noise Ka-Band GaAs HBT VCO
3. Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
4. Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure
5. Proton-Induced Degradation of InP/InGaAs HBTs Predicted by Nonionizing Energy Loss Model
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1. Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation;Electronics;2024-05-09
2. An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT;IEEE Transactions on Device and Materials Reliability;2023-12
3. A novel radiation-dependence model of InP HBTs including gamma radiation effects;Nuclear Engineering and Technology;2023-11
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