An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT-Reference-Cited by-同舟云学术

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An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT

Published:2023-12 Issue:4 Volume:23 Page:530-536
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Cheng Lin¹,Lu Hongliang¹^ORCID,Yan Silu¹^ORCID,Qi Junjun¹,Cheng Wei²,Zhang Yuming¹^ORCID,Zhang Yimen¹^ORCID

Affiliation:

1. School of Microelectronics and the Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi’an, China

2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China

Funder

National Defense Science and Technology Foundation Strengthening Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10346019/10285448.pdf?arnumber=10285448

Reference28 articles.

1. A 60-GHz Variable-Gain Phase Shifter With an Active RL Poly-Phase Filter

2. A 60-GHz 32-Way Hybrid Power Combination Power Amplifier in 55-nm Bulk CMOS

3. A 1.1-pJ/b 8-to-16-Gb/s Receiver With Stochastic CTLE Adaptation

4. Real-Time Millimeter-Wave Imaging for Moving Targets Realized in a Sparse Array Based on InP-HBT MMICs

5. A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced f _T-Doubler Technique

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