A 60-GHz 32-Way Hybrid Power Combination Power Amplifier in 55-nm Bulk CMOS
Author:
Affiliation:
1. School of Microelectronics, Tianjin University, Tianjin, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/10040254/09905873.pdf?arnumber=9905873
Reference40 articles.
1. A D-Band SiGe Power Amplifier Using a Four-Way Coupled-Line Wilkinson Combiner
2. A 55-65 GHz Internal Differentially Matched Silicon Power Amplifier With Spirally Folded 1:2 Balun
3. A Balanced Power Amplifier with Asymmetric Coupled-Line Couplers and Wilkinson Baluns in a 90 nm SiGe BiCMOS Technology
4. A 60-GHz Adaptively Biased Power Amplifier with Predistortion Linearizer in 90-nm CMOS
5. A 40-nm CMOS E-Band 4-Way Power Amplifier With Neutralized Bootstrapped Cascode Amplifier and Optimum Passive Circuits
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