32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul
Author:
Affiliation:
1. Fraunhofer IAF,Freiburg,Germany
2. Ericsson,Gothenburg,Sweden
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10454133/10454267/10454306.pdf?arnumber=10454306
Reference8 articles.
1. High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer
2. 4.9 A 60GHz CMOS Power Amplifier with Cascaded Asymmetric Distributed-Active-Transformer Achieving Watt-Level Peak Output Power with 20.8% PAE and Supporting 2Gsym/s 64-QAM Modulation
3. A 60-GHz 32-Way Hybrid Power Combination Power Amplifier in 55-nm Bulk CMOS
4. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%
5. 24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz
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1. Millimeter-wave PA design techniques in ISSCC 2024;Journal of Semiconductors;2024-04-01
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