2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg im Breisgau, Germany
2. Ericsson AB, Gothenburg, Sweden
Funder
European Union’s Horizon 2020 Research and Innovation Program under the Marie Skłodowska-Curie
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10144809/10115307.pdf?arnumber=10115307
Reference14 articles.
1. 3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier
2. A 2-W W-Band GaN Traveling-Wave Amplifier With 25-GHz Bandwidth
3. High-Efficiency Watt-Level E-band GaN Power Amplifier with a Compact Low-loss Combiner
4. GaN Technology for E, W and G-Band Applications
5. W-Band, Broadband 2W GaN MMIC
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