Affiliation:
1. School of Electronics and Information Hangzhou Dianzi University Hangzhou China
2. CanaanTek Co., Ltd Hangzhou China
3. Xinjiang Institute of Technology Aksu China
Abstract
SummaryThe small signal modeling, design, fabrication, and measurement about monolithic millimeter‐wave integrated circuit (MMIC) using gallium nitride (GaN) power amplifier (PA) on silicon carbide (SiC) working at the E band are proposed in this paper. The two stage PA used customized 4 × 75 μm transistor with 100 nm T gate technology. The extraction and optimization of small signal model are based on single GaN high electron mobility transistor (HEMT)'s measurement. Balanced structure and new method are used by low impedance matching, which can simplify circuits prominently and benefit for die size reduction. Radial stub and LC stub are made the whole circuit in absolute stable status; the in‐series DC block metal–insulator–metal capacitor from the matching circuit ensure the process is within small tolerances. From the 61–66 GHz bandwidth, a peak 10.7 dB small signal gain is obtained from the designed MMIC GaN PA, and also, the maximum output power can reach 29.7 to 30.4 dBm from 61 to 66 GHz, with an associated the peak drain efficiency of 18.8%. The final die size without dicing slot is 3.0 × 1.74 mm2.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. A 71–77-GHz Switch-Based Single-Chip Front End in 0.13-μm GaN Technology
2. GaN Technology for E, W and G‐band applications;Margomenos A;IEEE Compound Semiconductor Integr Circuit Symp (CSICS),2014
3. Propagation Models and Performance Evaluation for 5G Millimeter-Wave Bands
4. Power Amplifiers for mm-Wave 5G Applications: Technology Comparisons and CMOS-SOI Demonstration Circuits
5. BrownK BrownA FeenstraT et al.Ultra‐compact high speed mmW transceiver using GaN power amplifier technology in IEEE MTT‐S Int. Microw Symp