High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid-State Physics (IAF), Freiburg, D-79108, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8697340/8700641/08701033.pdf?arnumber=8701033
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past;IEEE Transactions on Microwave Theory and Techniques;2024-09
2. A 52-to-86GHz V-/E-Band GaN Distributed Combined Power Amplifier with Output Power Beyond 1W and 34GHz Bandwidth;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. 32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
4. Investigating Feeding Techniques for High-power and High-efficiency E-band Power Amplifiers;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21
5. Integrated GaN Power Detector for High Power Millimeter-Wave Applications;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21
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