High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid-State Physics (IAF), Freiburg, D-79108, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8697340/8700641/08701033.pdf?arnumber=8701033
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. GaN/SiC V-band 33 dBm Power Amplifier with 10% PAE for Inter Satellite Communications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. A 71–77-GHz Switch-Based Single-Chip Front End in 0.13-μm GaN Technology;IEEE Microwave and Wireless Technology Letters;2023-07
5. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%;IEEE Microwave and Wireless Technology Letters;2023-06
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