Integrated GaN Power Detector for High Power Millimeter-Wave Applications

Author:

Ufschlag Thomas1,Schoch Benjamin1,Wrana Dominik1,Wagner Sandrine2,Schwantuschke Dirk2,van Raay Friedbert2,Brückner Peter2,Kallfass Ingmar1

Affiliation:

1. University of Stuttgart,ILH,Stuttgart,Germany

2. Institute for Applied Solid State Physics,IAF,Freiburg,Germany

Publisher

IEEE

Reference13 articles.

1. Performance Optimization of an E-Band Communication Link using Open-Loop Predistortion;Schoch

2. Radio-frequency channel and block arrangements for fixed wireless systems operating in the 71-769 and 81-869 GHz bands;Recommendation,2012

3. High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer

4. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

5. Impairments of Atmospheric Attenuation on a Wideband E-Band Outdoor Communication Link

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Review on Solid-State Narrow and Wide-Band Power Amplifier;Arabian Journal for Science and Engineering;2024-08-23

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