2.6- and 4-W <i>E</i>-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%-Reference-Cited by-同舟云学术

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2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

Published:2023-06 Issue:6 Volume:33 Page:847-850
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Cimbili Bharath¹^ORCID,Friesicke Christian¹^ORCID,Raay Friedbert van¹,Wagner Sandrine¹,Bao Mingquan²^ORCID,Quay Rüdiger¹^ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg im Breisgau, Germany

2. Ericsson AB, Gothenburg, Sweden

Funder

European Union’s Horizon 2020 Research and Innovation Program under the Marie Skłodowska-Curie

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10144809/10115307.pdf?arnumber=10115307

Reference14 articles.

1. 3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

2. A 2-W W-Band GaN Traveling-Wave Amplifier With 25-GHz Bandwidth

3. High-Efficiency Watt-Level E-band GaN Power Amplifier with a Compact Low-loss Combiner

4. GaN Technology for E, W and G-Band Applications

5. W-Band, Broadband 2W GaN MMIC

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC;International Journal of Circuit Theory and Applications;2024-01-23

2. Electromagnetic Pulse Induced Failure Analysis of GaN HEMT Based Power Amplifier;IEEE Transactions on Power Electronics;2023

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