Effects of co-60 gamma-ray irradiation on the DC and RF characteristics of SiGe HBTs
Author:
Funder
National Natural Science Foundation of China
Special Project for Research and Development in Key areas of Guangdong Province
Publisher
Elsevier BV
Reference30 articles.
1. Variability in Total-ionizing-Dose Response of fourth-generation SiGe HBTs;Teng;IEEE Trans. Nucl. Sci.,2021
2. Tradeoffs between RF performance and SET robustness in low-noise amplifiers in a complementary SiGe BiCMOS platform;Ildefonso;IEEE Trans. Nucl. Sci.,2020
3. Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature;Yu;Sci. Bull.,2019
4. Total ionizing Dose effects of SiGe HBTs induced by 60 co gamma-ray irradiation;Liu;Nucl. Sci. and Eng.,2018
5. Total-ionizing-Dose Response of SiGe HBTs at elevated temperatures;Nergui;IEEE Trans. Nucl. Sci.,2022
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