Molecular dynamics simulations of displacement damage in SiGe alloys induced by single and binary primary knock-on atoms under different temperatures-Reference-Cited by-同舟云学术

Molecular dynamics simulations of displacement damage in SiGe alloys induced by single and binary primary knock-on atoms under different temperatures

Published:2023-09-07 Issue: Volume: Page:1-20
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Xing Tian¹,Liu Shuhuan¹,Wang Xuan¹,Adekoya Mathew Adefusika¹,Wang Chao¹,Li Haodi¹,Meng Fanjun¹,Du Xiaozhi¹,Sun Yunfeng¹,Zhu Shijie¹,Chen Wei²,Li Kang³,Zheng Xiaohai³

Affiliation:

1. Department of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an, People’s Republic of China

2. Northwest Institute of Nuclear Technology, Xi′an, People’s Republic of China

3. Xi'an Guanneng Neutron Detection Technology Co., Ltd., Xi'an, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2023.2253483

Reference39 articles.

1. SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers

2. A 1.8-3.1 dB Noise Figure (3-10 GHz) SiGe HBT LNA For UWB Applications

3. Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

4. High-performance SiGe HBTs for next generation BiCMOS technology

5. Total Ionizing Dose Effects of SiGe HBTs Induced by 60Co Gamma-Ray Irradiation

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1. Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT;Physica Scripta;2024-04-23

2. Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures;AIP Advances;2024-01-01