Author:
Haugerud Becca M.,Pratapgarhwala Mustansir M.,Comeau Jonathan P.,Sutton Akil K.,Prakash A.P. Gnana,Cressler John D.,Marshall Paul W.,Marshall Cheryl J.,Ladbury Ray L.,El-Diwany Monir,Mitchell Courtney,Rockett Leonard,Bach Tuyet,Lawrence Reed,Haddad Nadim
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Silicon–germanium heterojunction bipolar transistors;Cressler,2003
2. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications;Cressler;IEEE Trans Microwave Theory Tech,1998
3. The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs;Zhao;IEEE Trans Nucl Sci,2004
4. Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials;Comeau;IEEE Trans Nucl Sci,2004
5. Rapid evaluation of the root causes of BJT mismatch;Drennan;Proc IEEE ICMTS,2000
Cited by
26 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献