Proton and gamma radiation effects in a new first-generation SiGe HBT technology

Author:

Haugerud Becca M.,Pratapgarhwala Mustansir M.,Comeau Jonathan P.,Sutton Akil K.,Prakash A.P. Gnana,Cressler John D.,Marshall Paul W.,Marshall Cheryl J.,Ladbury Ray L.,El-Diwany Monir,Mitchell Courtney,Rockett Leonard,Bach Tuyet,Lawrence Reed,Haddad Nadim

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Silicon–germanium heterojunction bipolar transistors;Cressler,2003

2. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications;Cressler;IEEE Trans Microwave Theory Tech,1998

3. The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs;Zhao;IEEE Trans Nucl Sci,2004

4. Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials;Comeau;IEEE Trans Nucl Sci,2004

5. Rapid evaluation of the root causes of BJT mismatch;Drennan;Proc IEEE ICMTS,2000

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