SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications-Reference-Cited by-同舟云学术

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SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

Published:1998-05 Issue:5 Volume:46 Page:572-589
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Cressler J.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx4/22/14744/00668665.pdf?arnumber=668665

Cited by 291 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Genetic-algorithm-combined density functional theory calculations for investigating atomic properties of Si−Ge alloys;Materials Science in Semiconductor Processing;2024-11

2. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09

3. Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT;Physica Scripta;2024-04-23

4. Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study;Microelectronics Reliability;2024-04

5. Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM;IEEE Transactions on Electron Devices;2024-01

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