The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs-Reference-Cited by-同舟云学术

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The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs

Published:2004-12 Issue:6 Volume:51 Page:3243-3249
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Enhai Zhao ,Sutton A.K.,Haugerud B.M.,Cressler J.D.,Marshall P.W.,Reed R.A.,El-Kareh B.,Balster S.,Yasuda H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/29973/01369477.pdf?arnumber=1369477

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Total Ionizing Dose on Low Frequency Noise Characteristics in SiGe HBT;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24

2. Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions;IEEE Transactions on Nuclear Science;2023

3. Low-frequency noise in downscaled silicon transistors: Trends, theory and practice;Physics Reports;2022-12

4. Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10

5. Mismatch and Noise;Silicon Analog Components;2019-08-08

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