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The effects and mechanisms of 2 MeV proton irradiation on high bias conditions of InP/InGaAs DHBTs

  • Published:2024-02 Issue: Volume:212 Page:108832
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Liu Runkun,Mei Bo,Su Yongbo,Yang Feng,Zhang Jialin,Zhang Chen,Yun Huanqing,Sun Yi,Zhang Haiming,Jin Zhi,Zhong Yinghui

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Terahertz integrated electronic and hybrid electronic–photonic systems;Sengupta;Nat Electron,2018

2. Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network;Dong;Solid-State Elec,2023

3. A comparative study on radiation reliability of composite channel InP high electron mobility transistors;Zhang;Chin Phys B,2021

4. PKA distributions in InAlAs and InGaAs materials irradiated by protons with different energies;Yang;Nucl Instrum Methods Phys Res Sect B-Beam Interact Mater Atoms,2020

5. Over 450-GHz f(t) and f(max) InP/InGaAs DHBTs with a passivation ledge fabricated by utilizing SiN/SiO2 sidewall spacers;Kashio;IEEE Trans Electron Devices,2014

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