PKA distributions in InAlAs and InGaAs materials irradiated by protons with different energies-Reference-Cited by-同舟云学术

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PKA distributions in InAlAs and InGaAs materials irradiated by protons with different energies

Published:2020-12 Issue: Volume:484 Page:42-47
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yang Bo,Zhang Jiajia,Ding Peng,Sun Shuxiang,Jin Yanan,Zhao Xiangqian,Meng Shenghao,Hu Yanfei,Zhong Yinghui,Jin Zhi

Funder

National Natural Science Foundation of China

Promotion Funding for Excellent Young Backbone Teacher of Henan Province in China

Promotion Project for Physics Discipline in Zhengzhou University of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference36 articles.

1. Study on the shrinkage behavior and conductivity of silver microwires during electrostatic field assisted sintering;Shangguan;J. Phys. D: Appl. Phys.,2018

2. Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors;Ma;Chin. Phys. B,2018

3. Nanometre-scale electronics with III–V compound semiconductors;del Alamo;Nature,2011

4. A review of InP/InAlAs/InGaAs based transistors for high frequency applications;Ajayan;Superlattices Microstruct.,2015

5. Infrared single photon detector based on optical up-converter at 1550 nm;Bai;Sci. Rep.,2017

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT;Microelectronics Journal;2024-06

2. Intrinsic point defects investigation in InAlAs with extrapolated defect transition level;Microelectronics Journal;2024-05

3. WITHDRAWN: Vacancies and antisites investigation at InAlAs/InGaAs hetero-interface: A first-principles study;Results in Physics;2024-05

4. The effects and mechanisms of 2 MeV proton irradiation on high bias conditions of InP/InGaAs DHBTs;Solid-State Electronics;2024-02

5. Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network;Solid-State Electronics;2023-11

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