Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network-Reference-Cited by-同舟云学术

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Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network

Published:2023-11 Issue: Volume:209 Page:108784
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dong Jianping,Su Yongbo,Mei Bo,Yang Feng,Han Xinlong,Jin Zhi,Zhong Yinghui

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors;Zhang;Appl Phys Lett,2022

2. A comparative study on radiation reliability of composite channel InP high electron mobility transistors;Zhang;Chinese Phys B,2021

3. Thermal annealing behavior of InP-based HEMT damaged by proton irradiation;Zhao;Solid State Electron,2022

4. Influence of BCB protection on irradiation response of InP-based HEMTs: a comparative study;Zhang;IEEE Trans Electron Devices,2023

5. PKA distributions in InAlAs and InGaAs materials irradiated by protons with different energies;Yang;Nucl Instrum Methods Phys Res Sect B-Beam Interact Mater Atoms,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects and mechanisms of 2 MeV proton irradiation on high bias conditions of InP/InGaAs DHBTs;Solid-State Electronics;2024-02

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