Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference265 articles.
1. V. Radisic, K.M.K.H. Leong, S. Sarkozy, X. Mei, A 75 mW 210 GHz power amplifier module, in: Comp. Semi. Integrated Circuit Symp. (CSICS), October 2011, p. 1–4.
2. T.B. Reed, M. Rodwell, Z. Griffith, A 220 GHz InP HBT solid state power amplifier MMIC with 90 mW Pout at 8.2 dB compressed gain, in: Comp. Semi. Integrated Circuit Symp. (CSICS), October 2012, p. 1–4.
3. InP-DHBT-On BiCMOS Technology with fT/fmax of 400/350GHz for heterogeneous integrated millimeter wave sources;Kraemer;IEEE Trans. Elect. Dev.,2013
4. The role of molecular beam epitaxy in recent quantum hall effect physics discoveries;Pfeiffer;Physica E: Low-Dimensional Syst. Nanostruct.,2003
5. High-κ gate dielectrics: current status and material properties considerations;Wilk;J. Appl. Phys.,2001
Cited by
121 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献