Performances Analysis for Core-Shell Si/In<sub>x</sub>Ga<sub>1-x</sub>As FinFET-Reference-Cited by-同舟云学术

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Performances Analysis for Core-Shell Si/In_xGa_1-xAs FinFET

Published:2024-08 Issue:8 Volume:71 Page:4453-4461
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lu Yu-Cheng¹^ORCID,Chen Kuan-Lun²,Huang Ping³^ORCID,Chen Szu-Hung⁴^ORCID,Chen Yu³,Yi Chang Edward³^ORCID,Lin Chun-Hsiung³^ORCID

Affiliation:

1. Institute of Pioneer Semiconductor Innovation, National Yang-Ming Chiao-Tung University, Hsinchu, Taiwan

2. Department of Material Science and Engineering, National Yang-Ming Chiao-Tung University, Hsinchu, Taiwan

3. International College of Semiconductor Technology, National Yang-Ming Chiao-Tung University, Hsinchu, Taiwan

4. Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

Funder

National Science Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10568567.pdf?arnumber=10568567

Reference34 articles.

1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications

2. Inversion-mode InGaAs FinFETs for RF applications

3. InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

4. A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

5. InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance

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