Author:
Reed Thomas B.,Rodwell Mark,Griffith Zach,Rowell Petra,Young Adam,Urteaga Miguel,Field Mark
Cited by
8 articles.
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1. A 220-GHz InP DHBT power amplifier designed by adaptive impedance inner-stage matching (AIISM) technique;Infrared Physics & Technology;2024-03
2. Design of 340-GHz On-Chip Power Combiners for InP HBT PAs;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
3. 220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure;2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM);2021-11-28
4. 180 to 240 GHz broadband, EM‐based power amplifier using 0.5‐μm InP DHBT technology;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-03-08
5. Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-02-19