A 220-GHz InP DHBT power amplifier designed by adaptive impedance inner-stage matching (AIISM) technique-Reference-Cited by-同舟云学术

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A 220-GHz InP DHBT power amplifier designed by adaptive impedance inner-stage matching (AIISM) technique

Published:2024-03 Issue: Volume:137 Page:105175
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Sun Yan^ORCID,Dai Pengfei,Zeng Qingsheng,Li Yukun,Dai Jiangping,Cheng Wei,Lu Haiyan,Zhang Yong

Publisher

Elsevier BV

Reference16 articles.

1. InP/GaAsSb double heterojunction bipolar transistor emitter-fin technology with fMAX = 1.2 THz;Arabhavi;IEEE Trans. Electron Devices,2022

2. Indium phosphide heterobipolar transistor technology beyond 1-THz bandwidth;Rode;IEEE Trans. Electron Devices,2015

3. All active MMIC-based wireless communication at 220 GHz;Kallfass;IEEE Trans. THz Sci. Technol.,2011

4. A high-resolution 220-GHz ultra-wideband fully integrated ISAR imaging system;Mostajeran;IEEE Trans. Microwave Theory Techn.,2019

5. Scalable equivalent circuit FET model for MMIC design identi_ed through FW-EM analyses;Resca;IEEE Trans. Microw. Theory Techn.,2009

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