InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz
Author:
Affiliation:
1. Information Technology and Electrical Engineering (D-ITET) ETH Zürich, Zürich, Switzerland
Funder
Swiss National Science Foundation Project ULTIMATE
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09672313.pdf?arnumber=9672313
Reference23 articles.
1. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
2. 130nm InP DHBTs with ft >0.52THz and fmax >1.1THz
3. Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters
4. Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz
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4. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
5. Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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