Proposed equivalent circuit physics-based model of InP based double heterojunction bipolar transistors
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Elsevier BV
Reference42 articles.
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3. Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi. InP/GaAsSb double heterojunction bipolar transistor emitter-fin technology with fMAX = 1.2 THz. IEEE Transactions on Electron Devices 2022; 69(4): 2122-2129. https://ieeexplore.ieee.org/ document/9672313.
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