Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz-Reference-Cited by-同舟云学术

Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz

Published:2020-12 Issue:12 Volume:67 Page:5441-5447
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Deng Marina^ORCID,Mukherjee Chhandak^ORCID,Yadav Chandan^ORCID,Fregonese Sebastien^ORCID,Zimmer Thomas^ORCID,De Matos Magali^ORCID,Quan Wei^ORCID,Arabhavi Akshay Mahadev^ORCID,Bolognesi Colombo R.^ORCID,Wen Xin^ORCID,Luisier Mathieu^ORCID,Raya Christian,Ardouin Bertrand,Maneux Cristell^ORCID

Funder

Agence Nationale de la Recherche in the frame of the project ULTIMATE

Région Nouvelle-Aquitaine authorities through the SUBTILE project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9269285/09257180.pdf?arnumber=9257180

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2. THz InP/GaAsSb DHBTs with Record f_AVG ⁼800 GHz: Characterization to 330 GHz;2023 International Electron Devices Meeting (IEDM);2023-12-09

3. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023

4. InP DHBT test structure optimization towards 110 GHz characterization;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

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