Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure-Reference-Cited by-同舟云学术

Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure

Published:2007-09 Issue:2 Volume:579 Page:833-838
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Metcalfe J.,Dorfan D.E.,Grillo A.A.,Jones A.,Martinez-McKinney F.,Mekhedjian P.,Mendoza M.,Sadrozinski H.F.-W.,Saffier-Ewing G.,Seiden A.,Spencer E.,Wilder M.,Hackenburg R.,Kierstead J.,Rescia S.,Cressler J.D.,Prakash G.,Sutton A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Re-engineering silicon: Si-Ge heterojunction bipolar technology

2. Physics potential and experimental challenges of the LHC luminosity upgrade

3. Tracking detectors for the sLHC, the LHC upgrade

4. The effects of operating bias conditions on the proton tolerance of SiGe HBTs

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