The effects of operating bias conditions on the proton tolerance of SiGe HBTs-Reference-Cited by-同舟云学术

The effects of operating bias conditions on the proton tolerance of SiGe HBTs

Published:2003-10 Issue:10 Volume:47 Page:1729-1734
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhang Shiming,Cressler John D.,Niu Guofu,Marshall Cheryl J.,Marshall Paul W.,Kim Hak S.,Reed Robert A.,Palmer Michael J.,Joseph Alvin J.,Harame David L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications;Cressler;IEEE Trans. Microwave Theory,1998

2. Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT’s;Babcock;IEEE Electron Device Lett.,1995

3. Neutral radiation tolerance of advanced UHV/CVD SiGe HBTs;Roldan;IEEE Trans. Nucl. Sci.,1997

4. An investigation of the spatial location of proton-induced traps in SiGe HBT’s;Roldan;IEEE Trans. Nucl. Sci.,1998

5. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors;Banerjee;IEEE Trans. Nucl. Sci.,1999

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