Impact of Ring-Shaped Collector Contact on Total Ionizing Dose Susceptibility of Vertical n-p-n Bipolar Transistors
Author:
Affiliation:
1. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
2. Chongqing Semi-Chip Electronics Company Ltd., Chongqing, China
3. Chongqing Giga Chip Technology Company Ltd., Chongqing, China
Funder
National Natural Science Foundation of China
Foundation of National Innovation Center of Radiation Application
Special Foundation for Postdoctoral Research Project of Chongqing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9955238/09913954.pdf?arnumber=9913954
Reference34 articles.
1. Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures
2. Space charge limited degradation of bipolar oxides at low electric fields
3. Electronic traps andPbcenters at the Si/SiO2interface: Band‐gap energy distribution
4. Simulation methodology for dose effects in lateral DMOS transistors
5. Impact of Low Temperatures $({< 125}~{\rm K})$ on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs
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