Experimental investigation on the degradation of SiGe LNAs under different bias conditions induced by 3 MeV proton irradiation-Reference-Cited by-同舟云学术

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Experimental investigation on the degradation of SiGe LNAs under different bias conditions induced by 3 MeV proton irradiation

Published:2022-02 Issue:2 Volume:54 Page:661-665
ISSN:1738-5733
Container-title:Nuclear Engineering and Technology
language:en
Short-container-title:Nuclear Engineering and Technology

Author:

Li Zhuoqi^ORCID,Liu Shuhuan,Ren Xiaotang,Adekoya Mathew Adefusika,Zhang Jun,Liu Shuangying

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering

Reference36 articles.

1. Advantages of bipolar SiGe over silicon CMOS for a 2.1 GHz LNA;Logan,2009

2. A review on Si, SiGe, GaN, SiC, InP and GaAs as enabling technologies in EW and space;Lambrechts,2017

3. On the potential of SiGe HBTs for extreme environment electronics;Cressler;Proc. IEEE,2005

4. Silicon-germanium as an enabling technology for extreme environment electronics;Cressler;IEEE Trans. Device Mater. Reliab.,2010

5. Radiation effects in SiGe technology;Cressler;IEEE Trans. Nucl. Sci.,2013

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