Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band-Reference-Cited by-同舟云学术

Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Published:2020-09 Issue: Volume:112 Page:113750
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sagouo Minko Flavien,Stander Tinus

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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