Three Level Charge Pumping On Dielectric Hafnium Oxide Gate-Reference-Cited by-同舟云学术

Three Level Charge Pumping On Dielectric Hafnium Oxide Gate

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Raffel Y.¹,Drescher M.²,Olivo R.¹,Lederer M.¹,Hoffmann R.¹,Pirro L.²,Chohan T.²,Kampfe T.¹,Seidel K.¹,De S.¹,Heitmann J.³

Affiliation:

1. Fraunhofer IPMS,CNT,Dresden,Germany

2. Globalfoundries Fab 1,Dresden,Germany

3. TU Bergakademie Freiberg,Freiberg,Germany

Funder

Ministry of Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10032732/10032733/10032750.pdf?arnumber=10032750

Reference23 articles.

1. Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices

2. A reliable approach to charge-pumping measurements in MOS transistors

3. Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffraction;lederer;Nanomaterials,2020

4. Charge Pumping and Flicker Noise-based Defect Characterization in Ferroelectric FETs

5. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

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