28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview
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Published:2023-07
Issue:
Volume:4
Page:100048
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ISSN:2773-0646
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Container-title:Memories - Materials, Devices, Circuits and Systems
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language:en
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Short-container-title:Memories - Materials, Devices, Circuits and Systems
Author:
Raffel Yannick,
Müller FranzORCID,
Thunder Sunanda,
Sk Masud Rana,
Lederer MaximilianORCID,
Pirro Luca,
Beyer Sven,
Seidel Konrad,
Chakrabarti BhaswarORCID,
Kämpfe Thomas,
De SouravORCID
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4. A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants;Park;J. Mater. Chem. C,2017
5. S. De, Y.R. Maximilian Lederer, F. Muller, K. Seidel, T. Kaempfe, Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications, in: International SoC Design Conference, ISOCC, 2022.
Cited by
2 articles.
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