A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants-Reference-Cited by-同舟云学术

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A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

Published:2017 Issue:19 Volume:5 Page:4677-4690
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park M. H.¹²³^ORCID,Schenk T.¹²³,Fancher C. M.⁴⁵⁶⁷^ORCID,Grimley E. D.⁸⁹¹⁰⁷,Zhou C.¹¹¹²¹⁰⁷,Richter C.¹²³,LeBeau J. M.⁸⁹¹⁰⁷,Jones J. L.⁸⁹¹⁰⁷,Mikolajick T.¹²³¹³¹⁴^ORCID,Schroeder U.¹²³^ORCID

Affiliation:

1. NaMLab gGmbH

2. 01187 Dresden

3. Germany

4. Neutron Scattering Science Directorate

5. Oak Ridge National Laboratory

6. Oak Ridge

7. USA

8. Department of Materials Science and Engineering

9. North Carolina State University

10. Raleigh

11. Analytical Instrumentation Facility

12. College of Engineering at North Carolina State University

13. Chair of Nanoelectronic Materials

14. TU Dresden

Abstract

Quantitative phase analysis is first performed on doped Hafnia films to elucidate the structural origin of unexpected ferroelectricity.

Funder

National Science Foundation

Army Research Office

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01200D

Reference96 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in undoped hafnium oxide

3. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

4. Enhancing ferroelectricity in dopant-free hafnium oxide

5. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

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