Author:
De Sourav,Lederer Maximilian,Raffel Yannick,Müller Franz,Seidel Konrad,Kaempfe Thomas
Abstract
<p>CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of using hafnium oxide-basedferroelectric memory for in-memory-computing applications. Finally, we try to draw the roadmap for them. </p>
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Cited by
3 articles.
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