High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty-Reference-Cited by-同舟云学术

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

Published:2018-09 Issue:9 Volume:65 Page:3769-3774
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ali T.¹,Polakowski P.¹,Riedel S.¹,Buttner T.¹,Kampfe T.¹,Rudolph M.¹,Patzold B.¹,Seidel K.¹,Lohr D.¹,Hoffmann R.¹,Czernohorsky M.¹,Kuhnel K.¹,Steinke P.¹,Calvo J.¹,Zimmermann K.¹,Muller J.¹

Affiliation:

1. Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, Dresden, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8440584/08423435.pdf?arnumber=8423435

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