In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model-Reference-Cited by-同舟云学术

In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

Published:2024-09 Issue:9 Volume:71 Page:5388-5392
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Yuanquan¹^ORCID,Yuan Hongye¹,Gong Tiancheng¹^ORCID,Wang Yuan¹,Jiang Pengfei¹^ORCID,Wei Wei¹,Yang Yang¹,Chai Junshuai¹^ORCID,Wu Zhicheng¹,Wang Xiaolei¹^ORCID,Luo Qing¹^ORCID

Affiliation:

1. State Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

Ministry of Science and Technology (MOST) of China

Young Elite Scientists Sponsorship Program by the China Association for Science and Technology

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10630669.pdf?arnumber=10630669

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4. Precrystallization Engineering of Hf_0.5Zr_0.5O₂ Film in Back-End-of-Line Compatible Ferroelectric Device for Enhanced Remnant Polarization and Endurance

5. HfO₂-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications