FeFET: A versatile CMOS compatible device with game-changing potential-Reference-Cited by-同舟云学术

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FeFET: A versatile CMOS compatible device with game-changing potential

Published:2020-05 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Memory Workshop (IMW)
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Author:

Beyer Sven,Dunkel Stefan,Trentzsch Martin,Muller Johannes,Hellmich Andreas,Utess Dirk,Paul Jan,Kleimaier Dominik,Pellerin John,Muller Stefan,Ocker Johannes,Benoist Antoine,Zhou Haidi,Mennenga Menno,Schuster Martin,Tassan Fabio,Noack Marko,Pourkeramati Ali,Muller Franz,Lederer Maximilian,Ali Tarek,Hoffmann Raik,Kampfe Thomas,Seidel Konrad,Mulaosmanovic Halid,Breyer Evelyn T.,Mikolajick Thomas,Slesazeck Stefan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9106715/9108108/09108150.pdf?arnumber=9108150

Cited by 113 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model;IEEE Transactions on Electron Devices;2024-09

2. Ferroelectric-controlled magnetoelectric effect at the CrI3/HfO2 interface;Physical Review B;2024-08-05

3. Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors;IEEE Transactions on Electron Devices;2024-08

4. AFeCAM: An Energy Efficient Analog 1FeFET Content Addressable Memory;Proceedings of the Great Lakes Symposium on VLSI 2024;2024-06-12

5. Deep random forest with ferroelectric analog content addressable memory;Science Advances;2024-06-07

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