HfO<sub>2</sub>-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications-Reference-Cited by-同舟云学术

HfO₂-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications

Published:2023-06 Issue:6 Volume:44 Page:943-946
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Yuan¹^ORCID,Yang Yang¹,Jiang Pengfei¹^ORCID,Lv Shuxian¹^ORCID,Wang Boping¹,Chen Yuting¹,Ding Yaxin¹^ORCID,Gong Tiancheng¹^ORCID,Chen Bing²^ORCID,Cheng Ran²^ORCID,Yu Xiao³^ORCID,Luo Qing¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

3. Research Center for Intelligent Chips and Devices, Zhejiang Laboratory, Hangzhou, China

Funder

Ministry of Science and Technology (MOST) of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10132335/10103596.pdf?arnumber=10103596

Reference30 articles.

1. Application of the ferroelectric materials to ULSI memories

2. 64 kbit ferroelectric-gate-transistor-integrated NAND flash memory with 7.5 V program and long data retention;zhang;Jpn J Appl Phys,2012

3. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

4. Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

5. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model;IEEE Transactions on Electron Devices;2024-09

2. A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method;ECS Journal of Solid State Science and Technology;2024-06-03

3. Experimental Demonstration of Non-Volatile Boolean Logic With Field Configurable 1FeFET-1RRAM Technology;IEEE Electron Device Letters;2024-06

4. Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping;IEEE Transactions on Electron Devices;2024-06

5. Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation;Applied Physics Letters;2024-03-25