Synaptic plasticity and associative learning in IGZO-based synaptic transistor-Reference-Cited by-同舟云学术

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Synaptic plasticity and associative learning in IGZO-based synaptic transistor

Published:2024-10 Issue: Volume:376 Page:115641
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Jang Junwon,Park Suyong,Kim Doohyung,Kim Sungjun

Funder

Ministry of Science, ICT and Future Planning

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

NRF

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Elsevier BV

Reference79 articles.

1. Resistance switching memories are memristors;Chua;Appl. Phys. A Mater. Sci. Process,2011

2. A mini review of neuromorphic architectures and implementations;Nawrocki;IEEE Trans. Electron Devices,2016

3. Multi-level cells and quantized conductance characteristics of Al2O3-based RRAM device for neuromorphic system;Lee;Nanoscale Res. Lett.,2022

4. RRAM-based synapse devices for neuromorphic systems;Moon;Faraday Discuss.,2019

5. Non-volatile memory and synaptic characteristics of TiN/CeOx/Pt RRAM devices;Ha;Materials,2022

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