Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices-Reference-Cited by-同舟云学术

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Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Pirro L.,Jayakumar A.,Zimmerhackl O.,Lipp D.,Illgen R.,Muehlhoff A.,Pfuetzner R.,Zaka A.,Otto M.,Hoentschel J.,Raffel Y.,Seidel K.,Olivo R.

Funder

Federal Ministry for Economics and Energy (BMWi)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405122.pdf?arnumber=9405122

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3. Three Level Charge Pumping On Dielectric Hafnium Oxide Gate;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

4. An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory;Advanced Electronic Materials;2022-03-15

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