A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density-Reference-Cited by-同舟云学术

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density

Published:2023-02-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Khakifirooz Ali¹,Anaya Eduardo²,Balasubrahrmanyam Sriram²,Bennett Geoff¹,Castro Daniel²,Egler John²,Fan Kuangchan²,Ferdous Rifat¹,Ganapathi Kartik¹,Guzman Omar²,Ha Chang Wan¹,Haque Rezaul²,Harish Vinaya²,Jalalifar Majid¹,Jungroth Owen W.²,Kang Sung-Taeg¹,Karbasian Golnaz¹,Kim Jee-Yeon¹,Li Siyue²,Madraswala Aliasgar S.²,Maddukuri Srivijay²,Mohammed Amr¹,Mookiah Shanmathi²,Nagabhushan Shashi²,Ngo Binh²,Patel Deep²,Poosarla Sai Kumar²,Prabhu Naveen V.²,Quiroga Carlos²,Rajwade Shantanu¹,Rahman Ahsanur²,Shah Jalpa²,Shenoy Rohit S.¹,Menson Ebenezer Tachie²,Tankasala Archana¹,Thirumala Sandeep Krishna¹,Upadhyay Sagar²,Upadhyayula Krishnasree²,Velasco Ashley²,Vemula Nanda Kishore Babu²,Venkataramaiah Bhaskar²,Zhou Jiantao¹,Pathak Bharat M.²,Kalavade Pranav¹

Affiliation:

1. Intel,Santa Clara,CA

2. Intel,Folsom,CA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067616.pdf?arnumber=10067616

Reference5 articles.

1. A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

2. A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density

3. A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface

4. A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array

5. 30.2 A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm2 Bit Density

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