A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density
Author:
Cho Wanik1, Jung Jongseok1, Kim Jongwoo1, Ham Junghoon1, Lee Sangkyu1, Noh Yujong1, Kim Dauni1, Lee Wanseob1, Cho Kayoung1, Kim Kwanho1, Lee Heejoo1, Chai Sooyeol1, Jo Eunwoo1, Cho Hanna1, Kim Jong-Seok1, Kwon Chankeun1, Park Cheolioona1, Nam Hveonsu1, Won Haeun1, Kim Taeho1, Park Kyeonghwan1, Oh Sanghoon1, Ban Jinhyun1, Park Junyoung1, Shin Jaehyeon1, Shin Taisik1, Jang Junseo1, Mun Jiseong1, Choi Jehyun1, Choi Hyunseung1, Choi Suna-Wook1, Park Wonsun1, Yoon Dongkvu1, Kim Minsu1, Lim Junvoun1, An Chiwook1, Shirr Hyunyoung1, Oh Haesoon1, Park Haechan1, Shim Sungbo1, Huh Hwang1, Choi Honasok1, Lee Seungpil1, Sim Jaesuna1, Gwon Kichana1, Kim Jumsoo1, Jeong Woopyo1, Choi Jungdal1, Jin Kyo-Won1
Cited by
12 articles.
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