33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity-Reference-Cited by-同舟云学术

33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity

Published:2023-02-19 Issue: Volume: Page:
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Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Lee Po-Hao¹,Lee Chia-Fu¹,Shih Yi-Chun¹,Lin Hon-Jarn¹,Chang Yen-An¹,Lu Cheng-Han¹,Chen Yu-Lin¹,Lo Chieh-Pu¹,Chen Chung-Chieh¹,Kuo Cheng-Hsiung¹,Chou Tan-Li¹,Wang Chia-Yu¹,Wu J. J.¹,Wang Roger¹,Chuang Harry¹,Wang Yih¹,Chih Yu-Der¹,Chang Tsung-Yung Jonathan¹

Affiliation:

1. TSMC,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067837.pdf?arnumber=10067837

Reference6 articles.

1. 18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications

2. A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process

3. Recent Progress and Next Directions for Embedded MRAM Technology;gallagher;IEEE VLSI tech,2019

4. Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded Applications

5. A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference;chih;ISSCC,2020

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4. Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory;IEEE Electron Devices Magazine;2023-09

5. A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 $^{\circ}$C;IEEE Journal of Solid-State Circuits;2023