18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications-Reference-Cited by-同舟云学术

18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Min Doohong¹,Park Jinha¹,Weber Olivier²,Wacquant Francois²,Villaret Alexandre²,Vandenbossche Eric²,Arnaud Franck²,Bernard Emilie²,Elghouli Salim²,Boccaccio Christian²,Favennec Laurent²,Gonella Roberto²,Galvier Jean²,Yun Jiyoung¹,Park Jinwoo¹,Lee Minuk¹,Yoon Pyeongjun¹,Lee Ilmin¹,Seo Heaseok¹,Choi Hoonsung¹,Oh Changbong¹,Kang Jinseok¹,Park Sewan¹,Lee Hyunjong¹,Choi Youngju¹,Kim Inwhan¹,Jo Joohyun¹,Park Yoonsoo¹,Park Jinchan¹,Lee Youngja¹,Jung Jinhyeok¹,Lee Juwon¹,Jang Hana¹,Kang Jihun¹,Kwon Jisoo¹,Kim Joochan¹,Maeda Shigenobu¹,Hong Youngki¹

Affiliation:

1. Samsung Electronics Co., Ltd.,Foundry Division,Yongin-city,Gyeonggi-do,Republic of Korea,17113

2. STMicroelectronics,Crolles,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720542.pdf?arnumber=9720542

Reference4 articles.

1. Phase-Change Memory—Towards a Storage-Class Memory

2. A New BJT Selector for sub-0.02um2 High density Embedded PCM Memory in FDSOI CMOS Technology;weber;VLSI,0

3. Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs

4. High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications

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