Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators-Reference-Cited by-同舟云学术

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Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators

Published:2024-04-14 Issue: Volume:18 Page:1-4
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Pistolesi L.¹,Glukhov A.¹,de Gracia Herranz A.²,Lopez-Vallejo M.²,Carissimi M.³,Pasotti M.³,Rolandi P.³,Redaelli A.³,Martín I. Muñoz¹,Bianchi S.¹,Bonfanti A.¹,Ielmini D.¹

Affiliation:

1. Politecnico di Milano and IU.NET,Dipartimento di Elettronica, Informazione e Bioingegneria (DEIB),Milan,Italy,20133

2. Universidad Politecnica de Madrid,IPTC, ETSI Telecomunicacion,Madrid,Spain,28040

3. STMicroelectronics, Technology R&D,Agrate Brianza,Italy,20864

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529438.pdf?arnumber=10529438

Reference10 articles.

1. High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications

2. 18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications

3. Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

4. Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe

5. Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format

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