Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}

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Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

Published:2013-12 Issue:12 Volume:60 Page:4020-4026
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zuliani Paola,Varesi Enrico,Palumbo Elisabetta,Borghi Massimo,Tortorelli Innocenzo,Erbetta Davide,Libera Giovanna Dalla,Pessina Nicola,Gandolfo Anna,Prelini Carlo,Ravazzi Leonardo,Annunziata Roberto

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6665013/06651811.pdf?arnumber=6651811

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