A Compact, 114-GHz, High-efficiency Power Amplifier in a 250-nm InP HBT Process
Author:
Affiliation:
1. University of California,Department of Electrical and Computer Engineering,Santa Barbara,USA
Funder
Semiconductor Research Corporation (SRC)
DARPA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865635.pdf?arnumber=9865635
Reference11 articles.
1. 71–95 GHz (23–40% PAE) and 96–120 GHz (19–22% PAE) high efficiency 100–130 mW power amplifiers in InP HBT
2. A 130-GHz Power Amplifier in a 250-nm InP Process with 32% PAE
3. A D-Band SiGe Power Amplifier Using a Four-Way Coupled-Line Wilkinson Combiner
4. 24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS
5. D-Band and G-Band High-Performance GaN Power Amplifier MMICs;?wikli?ski;IEEE Transactions on Microwave Theory and Techniques,2019
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1. On-Wafer 3rd-Order Intermodulation Distortion Measurement of a D-Band Circuit;The Journal of Korean Institute of Electromagnetic Engineering and Science;2024-04
2. A D-Band Sub-Harmonically Pumped Mixer with High LO Suppression Using 250-nm InP DHBT P-N Junction;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. A Multi-stage 19.2-dBm, 30.4%-PAE D-band Power Amplifier in a 250-nm InP HBT Process;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
4. High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT;IEEE Journal of Microwaves;2023-04
5. A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
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